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Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-3PN TK31J60W5,S1VQ(O

RS-artikelnummer:: 896-2331
Tillv. art.nr:: TK31J60W5,S1VQ(O
Tillverkare / varumärke:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-3PN TK31J60W5,S1VQ(O

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RS-artikelnummer:: 896-2331
Tillv. art.nr:: TK31J60W5,S1VQ(O
Tillverkare / varumärke:: Toshiba

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Välj alla	Attribut	Värde
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Series	DTMOSIV
	Package Type	TO-3PN
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	230W
	Typical Gate Charge Qg @ Vgs	105nC
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4.5 mm
	Length	15.5mm
	Height	20mm
	Automotive Standard	No

	Välj alla
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Series DTMOSIV
	Package Type TO-3PN
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 230W
	Typical Gate Charge Qg @ Vgs 105nC
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4.5 mm
	Length 15.5mm
	Height 20mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-3PN TK31J60W5,S1VQ(O

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