N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK Infineon IRF540NSTRLPBF

RS-artikelnummer:: 831-2831
Tillv. art.nr:: IRF540NSTRLPBF
Tillverkare / varumärke:: Infineon

N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK Infineon IRF540NSTRLPBF

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RS-artikelnummer:: 831-2831
Tillv. art.nr:: IRF540NSTRLPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF

This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits

• Low Rds(on) of 44mΩ improves circuit efficiency
• High power dissipation capability of 130W supports robust applications
• Fast switching speed minimises energy loss during operation
• Wide operating temperature range from -55°C to +175°C suits diverse environments
• Lead-free construction adheres to contemporary environmental standards

Applications

• Power management in automation systems
• High-efficiency power supplies for electronics
• Motor control in electrical engineering
• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?

The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?

With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?

The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?

Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.

What is the significance of the enhancement mode in this MOSFET?

The enhancement mode allows for greater control over the conduction state, providing improved performance in switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	44 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	71 nC @ 10 V
Number of Elements per Chip	1
Width	9.65mm
Length	10.67mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	4.83mm