Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

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10 - 4013,058 kr130,58 kr
50 - 9010,838 kr108,38 kr
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Förpackningsalternativ:
RS-artikelnummer:
825-9051
Tillv. art.nr:
IPD042P03L3GATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS P

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

-1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

131nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Width

5.97 mm

Length

6.73mm

Automotive Standard

No

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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