Infineon OptiMOS P Type P-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1

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20 - 2025,385 kr507,70 kr
40 - 8024,114 kr482,28 kr
100 - 18023,10 kr462,00 kr
200 - 48022,087 kr441,74 kr
500 +20,563 kr411,26 kr

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Förpackningsalternativ:
RS-artikelnummer:
827-5230
Tillv. art.nr:
IPD90P04P4L04ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS P

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

-1.3V

Typical Gate Charge Qg @ Vgs

135nC

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Automotive Standard

AEC-Q101

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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