Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252

Se alla MOSFETs

Antal (1 rulle med 2500 enheter)*

16 935,00 kr

(exkl. moms)

21 170,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 2 500 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2500 +6,774 kr16 935,00 kr

*vägledande pris

RS-artikelnummer:
220-7415
Tillv. art.nr:
IPD90P03P4L04ATMA2
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type P

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

137W

Forward Voltage Vf

-1.3V

Typical Gate Charge Qg @ Vgs

125nC

Maximum Gate Source Voltage Vgs

5 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

relaterade länkar