Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 220-7410
- Tillv. art.nr:
- IPD70P04P4L08ATMA2
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
15 192,50 kr
(exkl. moms)
18 990,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 2 500 enhet(er) levereras från den 19 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 6,077 kr | 15 192,50 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7410
- Tillv. art.nr:
- IPD70P04P4L08ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
relaterade länkar
- Infineon OptiMOS Type P-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-70
