Infineon OptiMOS Type P-Channel MOSFET, 14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS-artikelnummer:
- 273-5244
- Tillv. art.nr:
- BSO301SPHXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
77,75 kr
(exkl. moms)
97,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 75 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 15,55 kr | 77,75 kr |
| 50 - 95 | 12,948 kr | 64,74 kr |
| 100 - 245 | 11,984 kr | 59,92 kr |
| 250 - 995 | 11,088 kr | 55,44 kr |
| 1000 + | 10,886 kr | 54,43 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5244
- Tillv. art.nr:
- BSO301SPHXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | OptiMOS | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Width | 40 mm | |
| Length | 40mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series OptiMOS | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Width 40 mm | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
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