Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- RS-artikelnummer:
- 273-5241
- Tillv. art.nr:
- BSO080P03SHXUMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
18 507,50 kr
(exkl. moms)
23 135,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 23 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 7,403 kr | 18 507,50 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5241
- Tillv. art.nr:
- BSO080P03SHXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.82V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40 mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSO080P03S H OptiMOSTM-P | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.82V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40 mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
relaterade länkar
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
