Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1

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29 892,50 kr

(exkl. moms)

37 365,00 kr

(inkl. moms)

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2500 +11,957 kr29 892,50 kr

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RS-artikelnummer:
273-5241
Tillv. art.nr:
BSO080P03SHXUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-14.9A

Maximum Drain Source Voltage Vds

-30V

Series

BSO080P03S H OptiMOSTM-P

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

-0.82V

Typical Gate Charge Qg @ Vgs

-102nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Length

40mm

Width

40 mm

Height

1.5mm

Automotive Standard

No

The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.

Logic level

Halogen free

RoHS compliant

Pb free lead plating

Enhancement mode

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