Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- RS-artikelnummer:
- 268-8316
- Tillv. art.nr:
- SIHK185N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
113,23 kr
(exkl. moms)
141,538 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 2 000 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 48 | 56,615 kr | 113,23 kr |
| 50 - 98 | 50,96 kr | 101,92 kr |
| 100 - 248 | 41,72 kr | 83,44 kr |
| 250 - 998 | 40,935 kr | 81,87 kr |
| 1000 + | 31,975 kr | 63,95 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8316
- Tillv. art.nr:
- SIHK185N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.193Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.193Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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