Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

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183 345,00 kr

(exkl. moms)

229 182,00 kr

(inkl. moms)

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RS-artikelnummer:
268-8300
Tillv. art.nr:
SIHH085N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

SIHH

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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