Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

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118,72 kr

(exkl. moms)

148,40 kr

(inkl. moms)

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Förpackningsalternativ:
RS-artikelnummer:
268-8305
Tillv. art.nr:
SIHK045N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

650V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.052Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

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