Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

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Antal (1 rulle med 2000 enheter)*

122 526,00 kr

(exkl. moms)

153 158,00 kr

(inkl. moms)

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2000 +61,263 kr122 526,00 kr

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RS-artikelnummer:
268-8306
Tillv. art.nr:
SIHK085N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

184W

Typical Gate Charge Qg @ Vgs

63nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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