Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

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Antal (1 rulle med 2000 enheter)*

39 868,00 kr

(exkl. moms)

49 836,00 kr

(inkl. moms)

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2000 +19,934 kr39 868,00 kr

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RS-artikelnummer:
268-8312
Tillv. art.nr:
SIHK125N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

45nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

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