Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

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116,26 kr

(exkl. moms)

145,32 kr

(inkl. moms)

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Förpackningsalternativ:
RS-artikelnummer:
268-8307
Tillv. art.nr:
SIHK085N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

184W

Typical Gate Charge Qg @ Vgs

63nC

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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