Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

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Antal (1 rulle med 2000 enheter)*

103 214,00 kr

(exkl. moms)

129 018,00 kr

(inkl. moms)

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2000 +51,607 kr103 214,00 kr

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RS-artikelnummer:
268-8304
Tillv. art.nr:
SIHK045N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.052Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

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