STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG

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123,54 kr

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154,42 kr

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Förpackningsalternativ:
RS-artikelnummer:
261-5047
Tillv. art.nr:
STH12N120K5-2AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.9Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

4.7mm

Width

10.4 mm

Length

15.8mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

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