STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG

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78 978,00 kr

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98 722,00 kr

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RS-artikelnummer:
151-913
Tillv. art.nr:
STH13N120K5-2AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

MDmesh K5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.69Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

44.2nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.4 mm

Standards/Approvals

RoHS

Height

4.7mm

Length

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

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