STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG

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103,26 kr

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129,08 kr

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2 - 1851,63 kr103,26 kr
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Förpackningsalternativ:
RS-artikelnummer:
151-438
Tillv. art.nr:
STH2N120K5-2AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

MDmesh K5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.3nC

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.4 mm

Height

4.7mm

Length

15.8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

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