Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

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RS-artikelnummer:
258-3971
Tillv. art.nr:
IRFH8303TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Width

5 mm

Length

6mm

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

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