Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

Se alla MOSFETs

Antal (1 rulle med 4800 enheter)*

49 867,20 kr

(exkl. moms)

62 332,80 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 20 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
4800 +10,389 kr49 867,20 kr

*vägledande pris

RS-artikelnummer:
258-3962
Tillv. art.nr:
IRF6646TRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Package Type

WDSON

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

relaterade länkar