Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON

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Antal (1 rulle med 5000 enheter)*

26 225,00 kr

(exkl. moms)

32 780,00 kr

(inkl. moms)

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  • Dessutom levereras 5 000 enhet(er) från den 29 december 2025
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5000 +5,245 kr26 225,00 kr

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RS-artikelnummer:
214-8966
Tillv. art.nr:
BSB104N08NP3GXUSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

MG-WDSON

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

10.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Width

6.35 mm

Height

0.7mm

Standards/Approvals

No

Length

5.05mm

Automotive Standard

No

The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Low parasitic inductance

Optimized technology for DC/DC converters

Dual sided cooling

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