Infineon HEXFET Type N-Channel MOSFET, 180 A, 30 V WDSON

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44 126,40 kr

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55 156,80 kr

(inkl. moms)

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4800 +9,193 kr44 126,40 kr

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RS-artikelnummer:
258-3966
Tillv. art.nr:
IRF6727MTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

WDSON

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.4mΩ

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

0.77V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

High-current rating

Dual-side cooling capability

Low package height of 0.7mm

Compact form factor

High efficiency

Environmentally friendly

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