Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- RS-artikelnummer:
- 214-8967
- Tillv. art.nr:
- BSB104N08NP3GXUSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
183,54 kr
(exkl. moms)
229,425 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 995 enhet(er) från den 26 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 12,236 kr | 183,54 kr |
| 75 - 135 | 11,625 kr | 174,38 kr |
| 150 - 360 | 11,133 kr | 167,00 kr |
| 375 - 735 | 10,655 kr | 159,83 kr |
| 750 + | 9,916 kr | 148,74 kr |
*vägledande pris
- RS-artikelnummer:
- 214-8967
- Tillv. art.nr:
- BSB104N08NP3GXUSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | MG-WDSON | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Length | 5.05mm | |
| Height | 0.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type MG-WDSON | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Length 5.05mm | ||
Height 0.7mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
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