Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252

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Antal (1 rulle med 2500 enheter)*

15 400,00 kr

(exkl. moms)

19 250,00 kr

(inkl. moms)

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  • Dessutom levereras 2 500 enhet(er) från den 29 december 2025
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Per rulle*
2500 +6,16 kr15 400,00 kr

*vägledande pris

RS-artikelnummer:
258-3865
Tillv. art.nr:
IPD85P04P407ATMA2
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-85A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

69nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, DIN IEC 68-1

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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