Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- RS-artikelnummer:
- 258-3862
- Tillv. art.nr:
- IPD70P04P409ATMA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
36,96 kr
(exkl. moms)
46,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 2 230 enhet(er) levereras från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 18,48 kr | 36,96 kr |
| 20 - 48 | 16,63 kr | 33,26 kr |
| 50 - 98 | 15,625 kr | 31,25 kr |
| 100 - 198 | 14,39 kr | 28,78 kr |
| 200 + | 13,385 kr | 26,77 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3862
- Tillv. art.nr:
- IPD70P04P409ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -73A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -73A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
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