Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- RS-artikelnummer:
- 258-3842
- Tillv. art.nr:
- IPD50P03P4L11ATMA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
28,26 kr
(exkl. moms)
35,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 428 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 14,13 kr | 28,26 kr |
| 20 - 48 | 12,60 kr | 25,20 kr |
| 50 - 98 | 11,705 kr | 23,41 kr |
| 100 - 198 | 11,03 kr | 22,06 kr |
| 200 + | 7,055 kr | 14,11 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3842
- Tillv. art.nr:
- IPD50P03P4L11ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | -0.31 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs -0.31 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
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