Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263
- RS-artikelnummer:
- 258-3817
- Tillv. art.nr:
- IPB80P04P4L04ATMA2
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
11 732,00 kr
(exkl. moms)
14 665,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 20 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 11,732 kr | 11 732,00 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3817
- Tillv. art.nr:
- IPB80P04P4L04ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
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