Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF
- RS-artikelnummer:
- 257-5887
- Tillv. art.nr:
- IRFH5301TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
78,21 kr
(exkl. moms)
97,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 3 640 enhet(er) levereras från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 15,642 kr | 78,21 kr |
| 50 - 120 | 13,932 kr | 69,66 kr |
| 125 - 245 | 13,148 kr | 65,74 kr |
| 250 - 495 | 9,386 kr | 46,93 kr |
| 500 + | 8,49 kr | 42,45 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5887
- Tillv. art.nr:
- IRFH5301TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.85mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Length | 6mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.85mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Length 6mm | ||
Width 5 mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
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