Infineon CoolMOS Type N-Channel MOSFET, 12 A, 700 V, 3-Pin TO-220 IPP65R190CFD7XKSA1

Antal (1 rör med 500 enheter)*

5 134,00 kr

(exkl. moms)

6 417,50 kr

(inkl. moms)

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  • Dessutom levereras 1 000 enhet(er) från den 29 december 2025
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500 +10,268 kr5 134,00 kr

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RS-artikelnummer:
236-3667
Tillv. art.nr:
IPP65R190CFD7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-220

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

150°C

Width

4.57 mm

Height

9.45mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 12 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market

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