Vishay TrenchFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3
- RS-artikelnummer:
- 228-2963
- Tillv. art.nr:
- SQS414CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
165,425 kr
(exkl. moms)
206,775 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 2 000 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 6,617 kr | 165,43 kr |
| 250 - 600 | 5,958 kr | 148,95 kr |
| 625 - 1225 | 5,622 kr | 140,55 kr |
| 1250 - 2475 | 4,301 kr | 107,53 kr |
| 2500 + | 3,306 kr | 82,65 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2963
- Tillv. art.nr:
- SQS414CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Forward Voltage Vf | 0.78V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Forward Voltage Vf 0.78V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 60 V power MOSFET.
100 % Rg and UIS tested
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