Vishay TrenchFET Type N-Channel MOSFET, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- RS-artikelnummer:
- 228-2923
- Tillv. art.nr:
- SiS178LDN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
82,77 kr
(exkl. moms)
103,46 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 5 580 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 8,277 kr | 82,77 kr |
| 100 - 240 | 7,448 kr | 74,48 kr |
| 250 - 490 | 6,115 kr | 61,15 kr |
| 500 - 990 | 5,376 kr | 53,76 kr |
| 1000 + | 4,155 kr | 41,55 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2923
- Tillv. art.nr:
- SiS178LDN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 70 V MOSFET.
100 % Rg and UIS tested
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