Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220

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Antal (1 rör med 50 enheter)*

611,40 kr

(exkl. moms)

764,25 kr

(inkl. moms)

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  • Slutlig(a) 850 enhet(er), redo att levereras
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50 - 5012,228 kr611,40 kr
100 - 20010,394 kr519,70 kr
250 +9,171 kr458,55 kr

*vägledande pris

RS-artikelnummer:
228-2880
Tillv. art.nr:
SiHP6N80AE-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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