Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251

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Antal (1 rör med 75 enheter)*

302,55 kr

(exkl. moms)

378,15 kr

(inkl. moms)

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  • Dessutom levereras 675 enhet(er) från den 29 december 2025
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75 +4,034 kr302,55 kr

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RS-artikelnummer:
222-4935
Tillv. art.nr:
IPS70R900P7SAKMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

IPS70R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

30.5W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.22mm

Length

6.73mm

Width

2.4 mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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