Infineon CoolMOS Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251
- RS-artikelnummer:
- 222-4714
- Tillv. art.nr:
- IPSA70R900P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rör med 75 enheter)*
195,225 kr
(exkl. moms)
244,05 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 425 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 75 + | 2,603 kr | 195,23 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4714
- Tillv. art.nr:
- IPSA70R900P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 30.5W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.38 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
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