Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251
- RS-artikelnummer:
- 222-4712
- Tillv. art.nr:
- IPSA70R600P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 75 enheter)*
633,825 kr
(exkl. moms)
792,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 05 oktober 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 75 - 75 | 8,451 kr | 633,83 kr |
| 150 - 300 | 6,592 kr | 494,40 kr |
| 375 - 675 | 6,169 kr | 462,68 kr |
| 750 - 1800 | 5,746 kr | 430,95 kr |
| 1875 + | 5,324 kr | 399,30 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4712
- Tillv. art.nr:
- IPSA70R600P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 43.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Standards/Approvals | No | |
| Width | 2.38 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 43.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Standards/Approvals No | ||
Width 2.38 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
relaterade länkar
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1