Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1
- RS-artikelnummer:
- 222-4936
- Tillv. art.nr:
- IPS70R900P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
131,15 kr
(exkl. moms)
163,95 kr
(inkl. moms)
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- Dessutom levereras 675 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 5,246 kr | 131,15 kr |
| 125 - 225 | 4,09 kr | 102,25 kr |
| 250 - 600 | 3,826 kr | 95,65 kr |
| 625 - 1225 | 3,566 kr | 89,15 kr |
| 1250 + | 3,302 kr | 82,55 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4936
- Tillv. art.nr:
- IPS70R900P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | IPS70R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series IPS70R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 30.5W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
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