Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

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114,90 kr

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143,62 kr

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20 - 805,745 kr114,90 kr
100 - 1804,945 kr98,90 kr
200 - 4804,648 kr92,96 kr
500 - 9804,312 kr86,24 kr
1000 +4,021 kr80,42 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4934
Tillv. art.nr:
IPS70R600P7SAKMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

IPS70R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

10.5nC

Maximum Power Dissipation Pd

43.1W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

6.73mm

Height

6.22mm

Width

2.4 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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