Infineon IPS70R Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPS70R1K4P7SAKMA1

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88,025 kr

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25 - 1003,521 kr88,03 kr
125 - 2253,091 kr77,28 kr
250 - 6003,015 kr75,38 kr
625 - 12252,934 kr73,35 kr
1250 +2,867 kr71,68 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4931
Tillv. art.nr:
IPS70R1K4P7SAKMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

IPS70R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22.7W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

4.7nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

6.73mm

Width

2.4 mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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