Infineon IPA60R Type N-Channel MOSFET, 38 A, 600 V Enhancement, 3-Pin TO-263 IPB60R055CFD7ATMA1
- RS-artikelnummer:
- 222-4889
- Tillv. art.nr:
- IPB60R055CFD7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
134,51 kr
(exkl. moms)
168,138 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 360 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 67,255 kr | 134,51 kr |
| 10 - 18 | 60,59 kr | 121,18 kr |
| 20 - 48 | 56,45 kr | 112,90 kr |
| 50 - 98 | 53,20 kr | 106,40 kr |
| 100 + | 49,17 kr | 98,34 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4889
- Tillv. art.nr:
- IPB60R055CFD7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | IPA60R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series IPA60R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
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