Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 222-4894
- Tillv. art.nr:
- IPB60R180P7ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
10 452,00 kr
(exkl. moms)
13 065,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 04 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 10,452 kr | 10 452,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4894
- Tillv. art.nr:
- IPB60R180P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPB65R | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPB65R | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
relaterade länkar
- Infineon IPB65R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1
- Infineon IPB65R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon IPB65R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R045C7ATMA2
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon IPA60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263