Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

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18 949,00 kr

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23 686,00 kr

(inkl. moms)

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RS-artikelnummer:
217-2503
Tillv. art.nr:
IPB60R080P7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

129W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.57mm

Length

10.31mm

Width

9.45 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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