Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 222-4892
- Tillv. art.nr:
- IPB60R099C7ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
19 031,00 kr
(exkl. moms)
23 789,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 19,031 kr | 19 031,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4892
- Tillv. art.nr:
- IPB60R099C7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPB60R | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPB60R | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
relaterade länkar
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R090CFD7ATMA1
- Infineon IPA60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon IPB65R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1
