Infineon CoolMOS Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251

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Antal (1 rör med 75 enheter)*

312,15 kr

(exkl. moms)

390,15 kr

(inkl. moms)

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  • Dessutom levereras 1 500 enhet(er) från den 29 december 2025
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75 +4,162 kr312,15 kr

*vägledande pris

RS-artikelnummer:
222-4708
Tillv. art.nr:
IPSA70R1K4P7SAKMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

TO-251

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

22.7W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Height

6.1mm

Width

2.38 mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

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