Infineon CoolMOS Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- RS-artikelnummer:
- 222-4711
- Tillv. art.nr:
- IPSA70R450P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
129,705 kr
(exkl. moms)
162,135 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 395 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 135 | 8,647 kr | 129,71 kr |
| 150 - 360 | 8,213 kr | 123,20 kr |
| 375 - 735 | 8,034 kr | 120,51 kr |
| 750 - 1485 | 7,527 kr | 112,91 kr |
| 1500 + | 7,004 kr | 105,06 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4711
- Tillv. art.nr:
- IPSA70R450P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
relaterade länkar
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251