Infineon CoolMOS Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- RS-artikelnummer:
- 222-4709
- Tillv. art.nr:
- IPSA70R1K4P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
134,05 kr
(exkl. moms)
167,55 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 500 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 5,362 kr | 134,05 kr |
| 125 - 225 | 4,126 kr | 103,15 kr |
| 250 - 600 | 3,857 kr | 96,43 kr |
| 625 - 1225 | 3,593 kr | 89,83 kr |
| 1250 + | 3,324 kr | 83,10 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4709
- Tillv. art.nr:
- IPSA70R1K4P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
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