Infineon CoolMOS Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- RS-artikelnummer:
- 222-4709
- Tillv. art.nr:
- IPSA70R1K4P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
134,05 kr
(exkl. moms)
167,55 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 1 500 enhet(er) levereras från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 5,362 kr | 134,05 kr |
| 125 - 225 | 4,126 kr | 103,15 kr |
| 250 - 600 | 3,857 kr | 96,43 kr |
| 625 - 1225 | 3,593 kr | 89,83 kr |
| 1250 + | 3,324 kr | 83,10 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4709
- Tillv. art.nr:
- IPSA70R1K4P7SAKMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
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