Infineon CoolGaN Type N-Channel MOSFET, 12.5 A, 600 V Enhancement, 8-Pin HSOF

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206 588,00 kr

(exkl. moms)

258 236,00 kr

(inkl. moms)

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2000 +103,294 kr206 588,00 kr

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RS-artikelnummer:
222-4637
Tillv. art.nr:
IGT60R190D1SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

600V

Series

CoolGaN

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound

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