Infineon CoolMOS C7 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 217-2556
- Tillv. art.nr:
- IPP60R040C7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
3 214,30 kr
(exkl. moms)
4 017,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 450 enhet(er) levereras från den 09 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 64,286 kr | 3 214,30 kr |
| 100 - 100 | 61,071 kr | 3 053,55 kr |
| 150 + | 57,214 kr | 2 860,70 kr |
*vägledande pris
- RS-artikelnummer:
- 217-2556
- Tillv. art.nr:
- IPP60R040C7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 29.95mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 29.95mm | ||
Automotive Standard No | ||
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
relaterade länkar
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R040C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220