Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD100N06S403ATMA2
- RS-artikelnummer:
- 215-2502
- Tillv. art.nr:
- IPD100N06S403ATMA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
110,74 kr
(exkl. moms)
138,42 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 2 340 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 11,074 kr | 110,74 kr |
| 50 - 90 | 10,52 kr | 105,20 kr |
| 100 - 240 | 10,077 kr | 100,77 kr |
| 250 - 490 | 9,634 kr | 96,34 kr |
| 500 + | 8,97 kr | 89,70 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2502
- Tillv. art.nr:
- IPD100N06S403ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra Low RDSon
Ultra High ID
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