Infineon CoolMOS C7 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- RS-artikelnummer:
- 214-9070
- Tillv. art.nr:
- IPL60R104C7AUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
302,47 kr
(exkl. moms)
378,09 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 965 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 60,494 kr | 302,47 kr |
| 10 - 20 | 54,454 kr | 272,27 kr |
| 25 - 45 | 50,804 kr | 254,02 kr |
| 50 - 120 | 47,78 kr | 238,90 kr |
| 125 + | 44,15 kr | 220,75 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9070
- Tillv. art.nr:
- IPL60R104C7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 104mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 122W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 104mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 122W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are suitable for hard and soft switching functions. It comes with increased power density solutions due to smaller packages. It Incorporates optimized PCB assembly and layout solutions.
Suitable for hard and soft switching
SMD package with very low parasitic inductance for easy device control
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