Vishay SiHW21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHW21N80AE-GE3
- RS-artikelnummer:
- 188-5016
- Tillv. art.nr:
- SIHW21N80AE-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
116,14 kr
(exkl. moms)
145,18 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 58,07 kr | 116,14 kr |
| 20 - 48 | 52,19 kr | 104,38 kr |
| 50 - 98 | 49,45 kr | 98,90 kr |
| 100 - 198 | 46,59 kr | 93,18 kr |
| 200 + | 43,625 kr | 87,25 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5016
- Tillv. art.nr:
- SIHW21N80AE-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | SiHW21N80AE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series SiHW21N80AE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Automotive Standard No | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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